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14nm finfet simulation project
the following is the 14nm finfet simulation in lam research's coventor semulator3d software i did for. my ee222 final project. this is the first and only grad class i've taken thus far, so enjoy. there are several problems with the simulation, such as:
- probably incorrect dimensions because it was thought (and not quite clarified) that 14nm is just a name and not the real gate pitches of the device. so much for marketing
- not so hot simulation for the p-type transistor
- not enough gates, since normally these devives have around 3 gates per mosfet
- unadjusted bandgap energy for materials e.g. the TiN, TaN, HfO2
- calculations that are wildly different from the simulation, with the simulation being more akin to the actual behavior
anyways, enjoy!